Measurement of Planar and Ordinary Hall Effects in Strontium Iridate Thin Films Grown on SrTiO3 Substrates
This project is being directed by Dr. Amlan Biswas in the University of Florida Department of Physics. I started on this project in August 2024.
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Image: Graphic showing the evolution of racetrack memory from
S. Parkin and S. H. Yang. Nature Nanotechnology. 2015 10, 195-198.
Research Description
When ferromagnetic materials are magnetized, domains of a certain magnetization form, and since it is unfavorable to have domains of two different magnetization bordering each other, domain walls form between them. The movement of domain walls under a current underlies the principle of domain wall memory, also known as racetrack memory. This is a type of solid state memory, which has longer lasting memories no moving parts in comparison to standard memory storage methods. This project focuses on tuning the sizes of domains and domain walls of ferromagnetic materials to understand their applications to domain wall memory.
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To study these materials, I will first use pulsed laser deposition to make thin films of Strontium Iridate on the STO substrates I prepared during my first project. On some of these thin films, I will use photolithography to create Hall bars on the surfaces. Then, all of the films will undergo low-temperature measurements to study their properties and observe how their ferromagnetic domains are behaving.